首页 | 本学科首页   官方微博 | 高级检索  
     

退火对AlGaInP/GaInP多量子阱 LED外延片性能的影响
引用本文:李述体,范广涵,周天明,孙慧卿,王浩,郑树文,郭志友. 退火对AlGaInP/GaInP多量子阱 LED外延片性能的影响[J]. 发光学报, 2004, 25(5): 510-514
作者姓名:李述体  范广涵  周天明  孙慧卿  王浩  郑树文  郭志友
作者单位:华南师范大学,光电子材料与技术研究所,广东,广州,510631;华南师范大学,光电子材料与技术研究所,广东,广州,510631;华南师范大学,光电子材料与技术研究所,广东,广州,510631;华南师范大学,光电子材料与技术研究所,广东,广州,510631;华南师范大学,光电子材料与技术研究所,广东,广州,510631;华南师范大学,光电子材料与技术研究所,广东,广州,510631;华南师范大学,光电子材料与技术研究所,广东,广州,510631
基金项目:国家科技攻关项目,华南师范大学校科研和教改项目,00-068,660119,,
摘    要:采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片.研究表明退火对外延片性能有重要影响.与未退火样品相比,460℃退火15min,外延片p型GaP层的空穴浓度由5.6×1018cm-3增大到6.5×1018cm-3,p型AlGaInP层的空穴浓度由6.0×1017cm-3增大到1.1×1018cm-3.但退火温度为780℃时,p型GaP层和p型AlGaInP层的空穴浓度分别下降至8×1017cm-3和1.7×1017cm-3,且Mg原子在AlGaInP系材料中的扩散加剧,导致未掺杂AlGaInP/GaInP多量子阱呈现p型电导.在460~700℃退火范围内,并没有使AlGaInP/GaInP多量子阱的发光性能发生明显变化.但退火温度为780℃时,AlGaInP/GaInP多量子阱的发光强度是退火前的2倍.

关 键 词:AlGaInP  AlGaInP/GaInP多量子阱  金属有机化学气相沉积  电化学电容电压分析  光致发光
文章编号:1000-7032(2004)05-0510-05
收稿时间:2003-09-15
修稿时间:2003-09-15

Influence of Thermal Annealing to the Characteristics of A1GaInP/GaInP Multiple Quantum Wells LED Wafers
LI Shu-ti,FAN Guang-han,ZHOU Tian-ming,SUN Hui-qing,WANG Hao,ZHENG Shu-wen,GUO Zhi-you. Influence of Thermal Annealing to the Characteristics of A1GaInP/GaInP Multiple Quantum Wells LED Wafers[J]. Chinese Journal of Luminescence, 2004, 25(5): 510-514
Authors:LI Shu-ti  FAN Guang-han  ZHOU Tian-ming  SUN Hui-qing  WANG Hao  ZHENG Shu-wen  GUO Zhi-you
Affiliation:Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
Abstract:The AlGaInP/GaInP multiple quantum wells red LED wafers were grown by EMCORE GS/3200 LP-MOCVD.Properties of these wafers were investigated by ECV and photoluminescence measurements.The influences of thermal annealing on the characteristics of AlGaInP/GaInP multiple quantum wells LED wafers were studied. The AlGaInP/GaInP multiple quantum wells LED wafer for thermal annealing experiments consisted of a 0.5 μm n-GaAs buffer layer with carrier concentration of about 5×1017 cm-3,a 0.5 μm n-(Al0.7Ga0.3)0.5In0.5P cladding layer with carrier concentration of about 3×1017 cm-3,a (Al0.3Ga0.7)0.5In0.5P/Ga0.5In0.5P MQW active region,a 0.5 μm p-(Al0.7Ga0.3)0.5In0.5P cladding layer with carrier concentration of about 6×1017 cm-3,and a 4.8 μm p-GaP current spreading layer with carrier concentration of about 5×1018 cm-3.The wafer was split into six pieces.These six pieces were annealed under different temperatures within 460~780℃ respectively for 15 min in nitrogen.Compared with as grown samples,the hole carrier concentration of GaP layer in LED wafer increased from 5.6×1018 cm-3 to 6.5×1018 cm-3,and the hole carrier concentration of AlGaInP layer increased from 6.0×1017 cm-3 to 1.1×1018 cm-3,when wafer was annealed under 460℃ for 15 min in nitrogen.The hole carrier concentration of GaP and AlGaInP layers did not obviously change when the annealed temperature was increased to 700℃.However,the hole carrier concentration of GaP layer and AlGaInP layer decreased to 8×1017 cm-3 and 1.7×1017 cm-3 when wafer was annealed under 780℃ for 15 min.And the diffusibility of Mg atoms was enhanced and the undoped AlGaInP/GaInP MQW was p type conductance when the annealing temperature increased to 780℃.The peak wavelength and FWHM did not obviously change when the annealing temperature was lower than 780℃.However,the PL peak intensity from MQW was about 2 times stronger than that of as grown sample when wafer was annealed under 780℃ for 15 min.
Keywords:AlGaInP  AlGaInP/GaInP MQW  MOCVD  ECV  photoluminescence
本文献已被 CNKI 万方数据 等数据库收录!
点击此处可从《发光学报》浏览原始摘要信息
点击此处可从《发光学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号