A polarizable point ion model for partially covalent semiconductors |
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Authors: | Renn W |
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Institution: | 1. Institut für Angewandte Physik, Universit?t Heidelberg, Albert-überle-Str. 3-5, D-6900, Heidelberg, Germany
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Abstract: | Theoretical models of the lattice dynamics of sapphire (α — Al2O3), based on the assumption of rigid ions, have been fitted to measured phonons at theΓ-point of the Brillouin zone. Short range interactions were taken into account by assuming 2-body interactions between touching ions. Additional 3-body interactions could not improve the fit significantly. Calculated dispersion curves are presented and compared with inelastic neutron scattering data. A good agreement for branches along the trigonal axis can be stated. |
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