Hot photoluminescence of GaAs-AlGaAs multiple quantum well structures under high excitation by a single shot of 30 ps, 532 nm laser

Energy-resolved decay times and time-resolved spectra of hot photoluminescence of GaAs-AlGaAs multiple quantum well structures at 77 K under high excitation (50 MW/cm²) were measured by single shot experiments with the use of a 30 ps, 532 nm laser, a streak camera, and an optical multichannel analyzer. It was found that the transition between higher subbands (n=2 e-hh) appears and its intensity relaxes with a decay time of about 200 ps. The theoretical expression for carrier relaxation in a two-dimensional quantum well was obtained. We found that the calculated energy loss rate due to Lo-phonon scattering (10 meV/ps) is at least four times larger than the observed one (2.7 meV/ps).