Directional compton profile studies of GaP

59.54 keV gamma ray Compton profiles (CP) of GaP along (100) and (1 1 1) directions are reported. The measured anisotropy has qualitatively similar features as given by the recent pseudopotential calculations for other III–V compound semiconductors. The average valence profile is found to be more peaked compared to that of the pure covalent semiconductors Si and Ge. This suggests that inonicity has the effect of making the valence-electron wave functions of compound semiconductors more diffused. Theoretical calculations on the directional Compton profiles of GaP will be of great use for an exact comparision with the present data, which will help in detailed understanding of the electronic structure of GaP.