Optical transitions on GaAs [110] surface |
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| Authors: | VL Berkovits IV Makarenko TA Minashvili VI Safarov |
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| Institution: | A.F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, 194021 Leningrad, USSR |
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| Abstract: | Modulation techniques have been employed in optical reflection measurements on GaAs 110] cleaved surface. Spectral bands at 2.62 and 2.83 eV observed for the light polarization have been assigned to the surface state transitions. The E1 and E1 + Δ1 bulk transitions were found to be sensitive to the surface conditions. |
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