Bound exciton diffusion in Si : B |
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Authors: | SR Oktyabrsky BG Zhurkin |
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Institution: | P.N. Lebedev Physical Institute, 53 Leninsky prospect, Moscow 117924, USSR |
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Abstract: | Photoluminescence measurements as a function of excitation intensity and temperature are presented for moderately doped Si : B. Some evidence is obtained for hopping motion of the bound excitons around the impurity centers with trapping at the clusters of impurities. Kinetic parameters of the excitation transfer are estimated. |
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