Ground state properties of the group IV ionic compound silicon carbide |
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Authors: | Neville Churcher Karel Kunc Volker Heine |
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Affiliation: | Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, England, UK |
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Abstract: | The basic ground state properties of cubic silicon carbide are calculated fully ab initio using the Local Density Functional method and norm-conserving pseudopotentials, with atomic numbers and the crystal structure as the only inputs. The distribution of the valence charge density suggests that the bonding in SiC is essentially ionic. |
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