Radiative recombination associated with a two-dimensional space charge layer in silicon

We present photoluminescence measurements in Si-MOS structures in presence of a two-dimensional space charge layer. A unique feature is observed: the electron-hole droplet and exciton recombinations are quenched, and a new radiative recombination channel appears, in presence of an electron space charge layer at the (1 1 1) and the (1 1 0) surfaces and of a hole space charge layer in the (1 0 0) surface. The dependence of the energy of this new band on the two-dimensional carrier concentrations is given and a simple model to explain the observed features is proposed.