Interface density of neutral dangling bonds in a-Si:H/a-SiNx:H superlattices |
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| Authors: | B.A. Wilson Z.E. Smith C.M. Taylor J.P. Harbison |
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| Affiliation: | AT&T Bell Laboratories, Murray Hill, NJ 07974, USA;Bell Communications Research, Murray Hill, NJ 07974, USA |
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| Abstract: | We report a determination of the density of singly-occupied dangling bonds at the a-Si:H/a-SiNx:H interface obtained from ESR measurements of superlattice structures. The surprisingly low result of 1.3 × 1010 cm?2 calls for a reexamination of previous transport and optical measurements. The ESR data do not preclude a high interface density of charged dangling bonds. |
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