Magneto-photoluminescence studies of manganese acceptors in GaAs/AlGaAs multiple quantum wells |
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| Authors: | A Petrou MC Smith CH Perry JM Worlock J Warnock RL Aggarwal |
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| Institution: | Physics Department, Northeastern University, Boston, MA 02115, USA;Bell Communications Research, Incorporated Holmdel, NJ 07733, USA;National Magnet Laboratory and Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA |
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| Abstract: | We have investigated the photoluminescence associated with residual manganese acceptors in n-type, modulation doped, GaAs/AlGaAs multiple quantum wells. In a magnetic field the luminescence breaks into discrete lines attributed to transitions between conduction band Landau levels and manganese acceptor states. The polarization of the luminescence was studied as function of magnetic field. A simple model based on the spin exchange interaction between the holes and the manganese ions successfully describes the polarization data. |
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