Size effect on different impurity levels in semiconductors — A comment

The results obtained for the strain energy corrections to O and Se donor ionization energies in GaP (at the P site) by Van Cong et al. in a recent communication [1] are shown to be fortuitous. It is pointed out that the results of Weinreich [2] are of the correct order unlike the results of Van Cong et al. which are too high in many cases and are not in agreement with experiment.