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Phonon-assisted tunneling in Schottky barriers
Authors:R Brazis  P Pipinys  A Rimeika  L Geg″znaite
Institution:Institute of Semiconductor Physics, Academy of Sciences of the Lithuanian SSR, K. Pozhelos 52, Vilnius 232600, USSR;Department of Physics, State Pedagogical Institute, Studentu 39, Vilnius 232034, USSR
Abstract:Experimental current-voltage characteristics and their temperature dependencies for AlGaAs Schottky barrier structures are shown to be in agreement with the recent theory of phonon-assisted tunneling.
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