Institute of Semiconductor Physics, Academy of Sciences of the Lithuanian SSR, K. Pozhelos 52, Vilnius 232600, USSR;Department of Physics, State Pedagogical Institute, Studentu 39, Vilnius 232034, USSR
Abstract:
Experimental current-voltage characteristics and their temperature dependencies for AlGaAs Schottky barrier structures are shown to be in agreement with the recent theory of phonon-assisted tunneling.