Hopping conductance in electron irradiated n-type GaAs |
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Authors: | SD Kouimtzi |
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Institution: | Department of Physics, University of Thessaloniki, Greece |
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Abstract: | A.c. conductivity is studied in n-type electron irradiated GaAs at helium temperatures. For T < 25 K variable range hopping is observed. The experimentally observed low values of are discussed. At T > 30 K the conductivity exhibits an activation energy of 0.5 meV which is attributed to excitation into an upper band. The frequency dependence of hopping conductance is σ ∝ ωS with S=1.8 and S=0.9 depending on the degree of radiation induced damage. |
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