Generation of high-frequency phonons by defect-induced one-phonon absorption |
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Authors: | H Schwartz KF Renk |
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Institution: | Institut für Angewandte Physik, Universität Regensburg D-8400 Regensburg, Federal Republic of Germany |
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Abstract: | By defect-induced one-phonon absorption of pulsed infrared radiation, we excited in diamond phonons at 28 THz. Their anharmonic decay leads to nonthermal frequency distributions of acoustic phonons which we investigated in a frequency range between 0.5 THz and 6 THz by use of vibronic sideband spectroscopy. |
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