Highg-factors and Landau level crossing in the valence band of narrow gap semiconductors

When the Kildal-Bodnar [1–3] model of cadmium arsenide is developed for the valence bands, it is found that, for a range of energy below the band maximum, the spin splitting of Landau states is larger than the separation between Landau levels. The same holds for a variety of inverted-gap materials of Kane type [4–5] (with three-dimensional symmetry), as well as Kildal type (with axial symmetry). This could have interesting consequences for interband optical properties of Cd₃As₂ as well as for other p-type materials.