The Compton profile of Bismuth excited below the K absorption edge |
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| Authors: | IK MacKenzie RJ Stone |
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| Institution: | Department of Physics, University of Guelph, Guelph, Ontario N1G 2W1, Canada |
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| Abstract: | A cylindrically symmetric Compton profile spectrometer stimulates resonant Raman scattering at the L2, L3, M and N edges in a Bi target when using a 109Cd γ-ray source with energy 2.50 keV below the K-shell binding energy of Bi. Similarly, an 241Am source (Eγ = 59.536 keV) excites a resonance response at the L3 and M edges of Yb (B.E. = 61.332 keV) but not in Lu (B.E. = 63.314 keV). |
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