| 聚苯乙烯球掩膜干法粗化提高LED发光效率 |
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| 引用本文： | 刘娉娉,武锐,武胜利,王强,柯志杰. 聚苯乙烯球掩膜干法粗化提高LED发光效率[J]. 半导体技术, 2010, 35(3). DOI: 10.3969/j.issn.1003-353x.2010.03.016 |
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| 作者姓名： | 刘娉娉 武锐 武胜利 王强 柯志杰 |
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| 作者单位： | 大连路美芯片科技有限公司,大连,116600 |
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| 基金项目： | 国家863资助项目(2006AA03A124) |
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| 摘 要： | 采用聚苯乙烯球作为掩膜层,对ITO(氧化铟锡)薄膜进行干法蚀刻实现ITO表面的粗化,提高GaN基大功率LED芯片外量子效率。利用AFM及SEM对ITO表面进行表征,比较了微球尺寸对ITO表面形貌及芯片光电参数的影响。结果表明,ITO表面经过350nm聚苯乙烯球图形化后,在未影响芯片正向电压和波长的前提下所制备的1mm×1mm波长为457nm的大功率LED芯片,亮度增加可达30%以上。
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| 关 键 词： | 聚苯乙烯球 氧化铟锡粗化 大功率发光二极管 外量子效率 |
Enhancement of Light Extraction from LED by Surface Roughness Using Polystyrene Spheres as Dry Etching Mask |
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| Liu Pingping,Wu Rui,Wu Shengli,Wang Qiang,Ke Zhijie. Enhancement of Light Extraction from LED by Surface Roughness Using Polystyrene Spheres as Dry Etching Mask[J]. Semiconductor Technology, 2010, 35(3). DOI: 10.3969/j.issn.1003-353x.2010.03.016 |
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| Authors: | Liu Pingping Wu Rui Wu Shengli Wang Qiang Ke Zhijie |
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| Affiliation: | Dalian Lumei Optoelectronics Corporation;Dalian 116600;China |
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| Abstract: | Dry etching on indium tin oxide(ITO) thin film was used to realize ITO surface roughness for raising the external quantum efficiency of GaN based on LED chip using polystyrene spheres as masks.The morphology was characterized by AFM and SEM,the effects of sphere size on the morphology and optoelectronic properties of ITO are compared.The results showed that the light output intensity of LED chip with 457 nm wavelength is enhanced approximately by 30% on the premise of not affecting the forward voltage and w... |
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| Keywords: | polystyrene sphere indium tin oxide (ITO) high power LED external quantum efficiency |
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