扩散极限下n型半导体的晶界附近的准费米能级

本文由受主缺陷扩散层模型详细计算了扩散极限下晶界附近的准费米能级的空间变化。对ｎ型半导体费米能级的变化几乎全部落在负偏向的晶界附近的较小的范围内。在受主缺陷扩散层中费未能级的变化是线性的。晶界和正偏向晶粒的费未能级只差一个ｋＴ数量级的值，受主缺陷扩散层存在并不改变该值和外加电压的关系但系数增大。

DIFFUSION -LIMITED QUASI-FERMI LEVEL NEAR A GRAIN BOUNDARY OF N -TYPE POLYCRYSTALLINE SEMICONDUCTORS

For the grain-boundary potential bather model with acceptor defect layers on grain surface, the spatal variation of the steady-state quasi-Fermi level near grain boundary is calculated in the diffusion limit For an n-type polystalline semiconductor,most of the variation occurs in the near grain boundary region on the revere-biased side.The level changes linearly in the acceptor defect layers.The Fend level difference between the grain boundary and the gum in the forward-biased side is only a quantity in kT outer,and the acceptor defect layer does not change the relation between this quantity and bias but the chop the coefficent.