Characterisation of thin sputtered silicon nitride films by NRA, ERDA, RBS and SEM

Summary Thin, amorphous silicon nitride (a-SIN_x) films were deposited on n-type (100) silicon substrates using an argon ion beam for sputtering a HPSN block under high vacuum conditions. The substrates were kept at room temperature. Nitrogen depth distributions were determined by NRA using the resonance reaction ¹⁵N(p,)¹²C at 429 keV. Hydrogen profiles were analysed by NRA (¹H(¹⁵N,)¹²C at E_o=6.385 MeV) and by ERDA (²⁰Ne²⁺, E_o=10 MeV). The NRA was used to determine the depth distributions (concentration vs. areal density) of nitrogen and hydrogen taking calibration standards into consideration. The silicon depth distributions and the N/Si ratios of the deposited a-SiN_x films were determined by RBS (⁴He⁺, E_o=2.0 MeV). Film thicknesses were obtained by SEM. The density of the deposited a-SiN_x films was found to be =2.7 (±0.1) g/cm³ by correlating RBS data and real film thicknesses as obtained by SEM.