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Charge trapping and breakdown in thin SiO2 polysilicon-gate MOS capacitors |
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| Authors: | M. Dutoit P. Fazan A. Benjelloun M. Ilegems J.-M. Moret |
| Affiliation: | Institute for Microelectronics, Swiss Federal Institute of Technology, CH-1015, Lausanne, Switzerland Swiss Center for Electronics and Microtechnology, CH-2000, Neuchâtel, Switzerland |
| Abstract: | Charge trapping during high-field (Fowler-Nordheim) injection in thin SiO2 films is investigated. Constant and pulsed current injection as well as C-V measurements are used to determine the evolution of trapped charge and interface state densities. The relation between these charges, which can be influenced by temperature and γ radiation, and dielectric breakdown is studied. We establish the dominant role of negative trapped charge. |
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