| Abstract: | We have fabricated Pt/SBT/insulator/Si structure for the transistor gate in MFIS-FET and investigated the electrical properties of MFIS structure with various insulator materials. SrBi2Ta2O9 films as a ferroelectric layer were deposited by metal organic decomposition (MOD) technique, on various insulator structures including SiON, and Al2O3 as well as on Pt/Ti/SiO2/Si structures. The effect of annealing temperature on the electrical properties of MFIS structures was investigated in order to analyze the applicability to conventional CMOS process. Although the remnant polarization of SBT films for MFM structure was increased with increasing annealing temperature, the memory window which has a relationship with remnant polarization of ferroelectrics was differently displayed with insulator structure in MFIS structure. |
