Proton-irradiated Pb(Zr0.52Ti0.48)O3 thick films for flexible non-volatile memory applications |
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Authors: | Tae Kwon Lee Dae Sol Kong Da Woon Jin Shinhee Yun Chan-Ho Yang Jong Hoon Jung |
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Affiliation: | 1. Department of Physics, Inha University, Incheon 22212, Republic of Korea;2. Department of Physics, KAIST, Daejeon 34141, Republic of Korea;3. KAIST Institute for the NanoCentury, KAIST, Daejeon 34141, Republic of Korea |
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Abstract: | We investigated the ferroelectricity in proton-irradiated flexible Pb(Zr0.52Ti0.48)O3 (PZT) thick films and their non-volatile memory characteristics. The Ni-Cr metal foil substrate allowed high-quality polycrystalline PZT films with flexible functionality to be fabricated using conventional sol-gel and high-temperature annealing methods. The 10-MeV proton-irradiated PZT film exhibited an almost square polarization?electric field hysteresis curve with saturated (Ps) and remnant (Pr) polarizations of 18.9 and 17.0 μC/cm2, respectively; which are slightly lower than as-grown PZT with Ps = 28.7 μC/cm2 and Pr = 24.3 μC/cm2. The Pr did not decrease even after 1000 cycles of continuous bending and unbending at a bending radius of 2.14 mm and decreased slightly to ~80% of its initial value after 105 s. Although the Pr decreased to ~55% after 1010 cycles, the electric polarization remained switchable under positive and negative electric fields. These characteristics suggest that the flexible PZT films could be utilized in non-volatile memory device applications in environments with high doses of proton irradiation, such as those in aeronautics and nuclear power plants. |
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Keywords: | Corresponding author. Proton irradiation Non-volatile memory |
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