脉冲激光沉积β-FeSi2/Si(111)薄膜的工艺条件

用FeSi2合金靶作为靶材,采用准分子激光沉积法在Si(111)单晶基片上制备了单相的-βFeSi2薄膜,并将飞秒脉冲激光沉积法(PLD)引入到-βFeSi2薄膜的制备工艺中;用X射线衍射仪(XRD),场扫描电镜(FSEM),能谱仪(EDS),紫外可见光光谱仪研究了薄膜的结构、组分、表面形貌和光学性能。基片温度为500℃,采用KrF准分子脉冲激光沉积法可获得单相的-βFeSi2薄膜。衬底温度为550℃时,-βFeSi2出现迷津状薄层。采用飞秒脉冲激光法-βFeSi2薄膜的合成温度比准分子脉冲激光沉积法制备温度低50~100℃;薄膜的晶粒分布均匀连续,没有微米级的微滴;飞秒脉冲激光沉积效率比准分子激光的高1000倍以上,是一种快速高效的-βFeSi2薄膜沉积技术。

β-FeSi2/Si(111) Thin Films Prepared by Pulsed Laser Deposition

The even single phase β-FeSi2 thin films were prepared by femtosecond pulsed laser deposition (PLD) on Si(111) wafers at different temperature using an FeSi2 alloy target, and excimer (nanosecond) PLD was introduced to prepared β-FeSi2 thin films also. X-ray diffraction (XRD), field scanning electron microscopy (FSEM), energy disperse spectroscopy (EDS), ultraviolet-visible spectra photometer were used to characterize the structure, composition and morphology of the films. The micro drop appeared in the both samples prepared by nanosecond PLD at 500 ℃ and 550 ℃, the maze surface appeared in the surface of the sample prepared at 550 ℃. The single phase β-FeSi2 thin films were gained by femtosecond PLD below 400 ℃, but the proper temperature of nanosecond PLD was 500 ℃; The β-FeSi2 thin films prepared by femtosecond PLD were free of micro drop, the deposition efficiency at unit average laser power in the process of depositing β-FeSi2 thin films by the femtosecond PLD system was 1000 times over that of the nanosecond PLD system.