| 半导体中非线性漂流扩散模型的拟中性极限:快扩散情形 |
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| 引用本文： | 肖玲,王术.半导体中非线性漂流扩散模型的拟中性极限:快扩散情形[J].数学进展,2003,32(5):615-622. |
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| 作者姓名： | 肖玲 王术 |
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| 作者单位： | 中国科学院数学与系统科学研究院,北京,100080,中国 |
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| 基金项目： | Supported by the MST (Grant No. 1999075107) and the Innovation funds of AMSS, CAS of China，Supported by the National Youth Natural Science Foundation (Grant No. 10001034) and Postdoctoral Science Fundation of China and the Morningside Mathematics Center |
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| 摘 要： | 本文研究无Pn-联结的非线性双极半导体漂流扩散模型的消失Debye长度极限(即粒子中性极限)问题．使用熵方法和弱紧性方法从数学上严格证明了快扩散情形的拟中性极限．
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| 关 键 词： | 半导体 非线性漂流扩散模型 拟中性极限 消失Debye长度极限 熵 弱紧性 Poisson方程 初边值问题 |
Quasineutral Limit of a Nonlinear Drift Diffusion Model for Semiconductors: The Fast Diffusion Case |
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| XIAO Ling,WANG Shu.Quasineutral Limit of a Nonlinear Drift Diffusion Model for Semiconductors: The Fast Diffusion Case[J].Advances in Mathematics,2003,32(5):615-622. |
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| Authors: | XIAO Ling WANG Shu |
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| Abstract: | The limit of vanishing Debye length (charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without pn-junction (i.e. with a unipolar background charge) is studied. The quasineutral limit (zero-Debye-length limit) for the fast diffusion case is performed rigorously by using the compactness argument and the so-called entropy functional which yields appropriate uniform estimates. |
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| Keywords: | quasineutral limit nonlinear drift-diffusion equations entropy method |
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