Influence of the SiO thickness on the photoluminescence properties of Er-doped SiO/SiO2 multilayers |
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Authors: | G. Wora Adeola P. Miska M. Vergnat |
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Affiliation: | Laboratoire de Physique des Matériaux (UMR CNRS 7556), Université Henri Poincaré, Nancy 1, B.P. 239, 54506 Vandœuvre-lès-Nancy Cedex, France |
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Abstract: | Er-doped SiO single layer and Er-doped SiO/SiO2 multilayers with different SiO thicknesses were prepared by evaporation. In the as-deposited samples, the erbium ions exhibit a very weak photoluminescence emission at 1.54 μm. This luminescence is strongly enhanced after annealing treatments between 500 and 1050 °C, with an optimal annealing temperature which is dependent from the SiO thickness. For the SiO single layer, this optimal temperature is around 700 °C while it is shifted at highest temperature for the multilayers. The origin of the higher luminescence intensity in the SiO layer is also discussed. |
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Keywords: | 61.72.Tt 78.55.&minus m 78.67.Bf |
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