Temperature dependence of electroluminescence from Si-based light emitting diodes with β-FeSi2 particles active region |
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Authors: | Cheng Li T Suemasu |
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Institution: | a Department of physics, Xiamen University, Xiamen, Fujian 361005, China b Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan |
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Abstract: | Electroluminescence (EL) properties of Si-based light emitting diodes with β-FeSi2 particles active region grown by reactive deposition epitaxy are investigated. EL intensity of β-FeSi2 particles versus excitation current densities has different behaviors at 8, 77 K and room temperature, respectively. The EL peak energy shifted from 0.81 to 0.83 eV at 77 K with the increase of current density from 1 to 70 A/cm2. Temperature dependence of the peak energy can be well fitted by semi-empirical Varshni's law with the parameters of α=4.34 e-4 eV/K and β=110 K. These results indicate that the EL emission originates from the band-to-band transition with the band gap energy of 0.824 eV at 0 K. |
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Keywords: | 78 60 &minus b 78 60 Fi 78 66 &minus w |
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