Estimation of the acceleration ability for electrons in SiO2 and the tunneling effect |
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Authors: | Fujun Zhang Feng Teng Zhidong Lou Lijian Meng Yongsheng Wang |
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Affiliation: | a Key Laboratory for Information Storage, Display and Materials, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, PR China b Departamento de Fisica, Instituto Superior de Engenharia do Porto, 4200-072 Porto, Portugal |
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Abstract: | Silicon dioxide (SiO2) plays an important role in layered optimization scheme and solid-state cathodoluminescence (SSCL). Initially, it was believed that the SiO2 layer would (i) generate extra interface states contributing to a number of primary electrons available for exciting the luminescent centers, and/or (ii) act as acceleration layer resulted in gaining high energy for those electrons that would tunnel into the luminescent layer to excite luminescent centers. Based on the brightness vs. voltage (B-V) measurements, we deem that the latter case, i.e. acceleration and tunneling, is the dominant mechanism. A detailed discussion in terms of electrons acceleration and tunneling as the main contributions to the enhancement of brightness is presented. |
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Keywords: | 73.61.Jc 77.55.+f 78.60.Fi |
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