1.54 μm room temperature emission from Er-doped Si nanocrystals deposited by ECR-PECVD |
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| Authors: | A Podhorodecki J Misiewicz E Irving |
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| Institution: | a Institute of Physics, Wroc?aw University of Technology, Wybrze?e Wyspiańskiego 27, 50-370 Wroc?aw, Poland
b Centre for Emerging Device Technologies, Department of Engineering Physics, McMaster University, Hamilton, Ont., Canada L8S 4L7 |
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| Abstract: | In this work, silicon nanocrystals (Si-nc) embedded in a silicon-rich silicon oxide (SRSO) matrix doped with Er3+ ions for different erbium and silicon concentrations have been deposited by electron-cyclotron resonance plasma-enhanced chemical-vapor-deposition (ECR-PECVD) technique. Their optical properties have been investigated by photoluminescence (PL) and reflectance spectroscopy.Room temperature emission bands centered at ∼1.54 and at 0.75 μm have been obtained for all samples. The most intense emission band at ∼1.54 μm was obtained for samples with concentrations of 0.45% and 39% for erbium and silicon, respectively. Moreover, it has been found that the broad emission band centered at ∼0.75 μm for all samples shows a very strong interference pattern related to the a specific sample structure and a high sample quality. |
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| Keywords: | 78 30 Fs 78 40 &minus q 78 55 &minus m 78 66 &minus w 78 67 &minus n 78 67 Bf |
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