Double step buried oxide (DSBO) SOI-MOSFET: A proposed structure for improving self-heating effects |
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Authors: | Ali A Orouji Sara Heydari Morteza Fathipour |
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Institution: | aElectrical Engineering Department, Semnan University, Semnan, Iran;bElectrical Engineering Department, Tehran University, Tehran, Iran |
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Abstract: | For the first time, a novel structure named as double step buried oxide silicon-on-insulator-MOSFET (DSBO-SOI) is proposed, which can combine the advantages of both SOI structure and bulk structure. Design consideration for a 30 nm channel length SOI-MOSFET employing double step buried oxide (DSBO) is presented. The electrical characteristics and temperature distribution are analyzed and compared with ultra-thin body silicon-on-insulator (UTB-SOI) MOSFET. The DSBO devices are shown to have better leakage and sub-threshold characteristics. Furthermore, the channel temperature is reduced during high-temperature operation and drain current increase suggesting that DSBO can mitigate the self-heating penalty effectively. Our results suggest that DSBO is an alternative to silicon dioxide as the buried dielectric in SOI, and expands the application of SOI to high temperature. |
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Keywords: | Self-heating effect UTB SOI-MOSFET Simulation Temperature distribution |
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