Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs

This paper presents an accurate analytical model of the random telegraph signal (RTS) noise time-constant ratio (\bar {τ}_c/ \bar {τ}_e for RTS noise in nano-MOSFETs, in which the Coulomb-blockade effect on trapping and detrapping processes was taken into account. Based on this new model, the depth of the trap responsible for RTS noise in a sample n-type nano-MOSFET is extracted. The results show that large errors will be introduced to the calculated trap depth when the Coulomb-blockade effect is neglected.