Optical switch with low-phase transition temperature based on thin nanocrystalline VOx film |
| |
Authors: | Xiqu Chen Jun Dai |
| |
Affiliation: | a Department of Mathematics and Physics, Wuhan Polytechnic University, Wuhan, Hubei 430023, China b Department of Optoelectronic Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China c Wuhan National Laboratory for Optoelectronics, Wuhan 430074, China |
| |
Abstract: | An optical switch is fabricated by using micromachining technology, which is based on thin nanocrystalline vanadium oxide (VOx) film, and it consists of four layers: a silicon (Si) substrate layer, a VOx layer, a Si3N4 buffer layer, and an aurum (Au) electrode layer. By applying a switching power supply to a pair of the Au electrodes, the optical switch is controlled to exhibit from an “on” state with semi-conducting phase to an “off” state with metallic phase. The optical switch performance is investigated, and testing results show that its extinction ratio is about 14 dB, its switching response time can achieve about 1.5 ms, and the power dissipation required for stimulating switching to work can be below about 15 mW at least, which is lower than the power dissipation of conventional optical switches based on microstructure thin vanadium dioxide (VO2) films. This kind of optical switch is potential to be applied as optical switch for optical communication. |
| |
Keywords: | Optical switch Nanocrystalline VOx film Phase transition temperature |
本文献已被 ScienceDirect 等数据库收录! |
|