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Effect of normal and reversed polarizations on optical characteristics of ultraviolet-violet InGaN laser diodes |
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| Authors: | Yen-Kuang Kuo Syuan-Huei Horng Sheng-Horng Yen |
| Institution: | a Department of Physics, National Changhua University of Education, Changhua 500, Taiwan b Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan c R&D Division, Epistar Co., Ltd., Science-based Industrial Park, Hsinchu 300, Taiwan d Department of Industrial Education and Technology, National Changhua University of Education, Changhua 500, Taiwan |
| Abstract: | The optical characteristics of ultraviolet-violet InGaN laser diodes with different numbers of quantum wells under normal and reversed polarizations are numerically investigated. For the laser structures under normal polarization, the lowest threshold current is obtained when the number of quantum wells is two in the spectral range of 380-408 nm. For the laser structures under reversed polarization, the single quantum-well laser structure possesses the lowest threshold current. The simulation results suggest that the physical origin for these phenomena is caused by the sufficiently suppressed electron and hole leakage currents when the laser diode is under reversed polarization. |
| Keywords: | Semiconductor lasers Piezoelectric devices Numerical simulation |
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