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Luminescence characteristics of InAlP---InGaP heterostructures having native-oxide windows |
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| Authors: | M R Islam R D Dupuis A L Holmes A P Curtis N F Gardner G E Stillman J E Baker R Hull |
| Institution: | a Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712-1100, USA b Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA c Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA d Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22903, USA |
| Abstract: | Data are presented on the luminescence characteristics of InGaP/InAlP heterostructures with oxidized InAlP cladding layers grown by metalorganic chemical vapor deposition. The structures are grown on GaAs substrates and consist of either a 20 nm thick In0.5Ga0.5P quantum well or a 0.75 μm InGaP layer sandwiched between two InAlP bulk barriers or between two 10-period In0.5Al0.5P/InxGa1?xP strain-modulated superlattice heterobarriers, where x varies from 0.5 to 0.45 and the period of the superlattice is  3 nm. The top InAlP cladding layer of the InAlP/InGaP heterostructures is oxidized for 2–5.5 h at 500°C in an ambient of H2O vapor saturated in a N2 carrier gas. Photoluminescence and time-resolved photoluminescence studies at room temperature show that, as a result of the oxidation of a portion of the top InAlP cladding layer, the photoluminescence emission intensity and lifetime from the InGaP QWs increase significantly. |
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