Electron and impurity distributions in epitaxial n-type gallium arsenide |
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| Authors: | L. G. Lavrent'eva M. D. Vilisova Yu. G. Kataev V. A. Moskovkii |
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| Affiliation: | (1) V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR |
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| Abstract: | The electron, donor, and acceptor distributions along the thickness of epitaxial gallium arsenide films were studied as functions of the nature and orientation of the substrate. There is a discussion of mechanisms which may be responsible for these distributions.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 96–100, January, 1971. |
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