Single-well resonant-tunneling diode heterostructures based on In0.53Ga0.47As/AlAs/InP with the peak-to-valley current ratio of 22:1 at room temperature |
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| Authors: | V S Syzranov O A Klimenko A S Ermolov I P Kazakov S S Shmelev V I Egorkin V N Murzin |
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| Institution: | 1. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia
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| Abstract: | Current-voltage (I–V) characteristics of resonant-tunneling diode In0.53Ga0.47As/AlAs/InP structures are studied at 300 and 77 K. The peak-to-valley current ratios were determined as 22:1 and 44:1 at temperatures of 300 and 77 K, respectively, which correspond to the maximum values for InGaAs/AlAs/InP heterostructures without an additional InAs layer of a quantum subwell in their configuration. |
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