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The n-type Gd-doped HfO |
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| Authors: | I. Ketsman Y.B. Losovyj A. Sokolov J. Tang Z. Wang K.D. Belashchenko P.A. Dowben |
| Affiliation: | (1) Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, P.O. Box 880111, Lincoln, NE 68588-0111, USA;(2) Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Highway, Baton Rouge, LA 70806, USA;(3) Department of Physics, University of New Orleans, New Orleans, LA 70148, USA |
| Abstract: | Gd-doped HfO2 films were deposited on p-type silicon substrates in a reducing atmosphere. Photoemission measurements indicate the n-type character of Gd-doped HfO2 due to overcompensation with oxygen vacancies. The Gd 4f photoexcitation peak at 5.5 eV below the valence band maximum is identified using both resonant photoemission and first-principles calculations of the f hole. The rectifying (diode-like) properties of Gd-doped HfO2 to silicon heterojunctions are demonstrated. PACS 79.60.-i; 68.55.Ln; 29.40.Wk; 81.05.Je |
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