Abstract: | A procedure is developed for calculation of the electron-energy spectrum of crystals with point defects using a 128-atom periodic
cluster and with consideration of local defect symmetry. Electron-energy spectra are calculated for GaAs with AsGa, SbGa, GaAs, and InAs defects. The calculated results for deep levels agree with observations. Deep-level electron-density distribution is discussed
as a function of center type. The spinorbital orbital splitting of localized levels is estimated.
Tomsk State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 13–21. August, 1996. |