名义组份Bi6Se9Ge4CuOx块材和粉末压实样品的热电势和电导率

采用熔化淬火工艺制备Bi6Se9Ge4CuOx。块材和粉末压实样品均在300℃进行了热处理，该温度远低于玻璃转变温度419℃（由DTA热重分析得知）。无论是末经处理还是热处理后的样品，都具有多相结构。热电势测量结果表明，可能有电子和空穴的导电。载流子的导电类型主要取决于热处理条件。热电势以扩散分量为主，声子曳引可以忽略。跳跃导电是常见的，而半金属行为只在特殊的热处理条件下出现。

SEEBECK COEFFICIENT AND ELECTRICALCONDUCTIVITY OF BULK AND POWDER COMPACTSAMPLES OF NOMINAL COMPOUND Bi6Se9Ge4CuOx

The composition Bi6Se9Ge4CuOx was prepared by the melting quench technique. Both bulk and powder compact samples were thermally treated at 300℃ which is far below the glass transition temperature (419℃) as determined from the DTA thermogram. Whether the samples were as-quenched or heat treated, they possessed multiphase structure. Measurements of thermoelectric power proved the possibility of contributions of both electrons and holes to conduction. The domination of contribution of particular kind of charge carriers was found to depend on the conditions of heat treatment. Also, it proved the over passing of the diffusion component with respect to phonon-drag component. Semimettallic behavior could be observed at particular conditions of heat treatment, despite of that, the hopping conduction mechanism was the most prevailing.``