Combining CdTe and Si detectors for Energy‐Dispersive X‐Ray Fluorescence

Most energy‐dispersive X‐ray fluorescence (EDXRF) instruments use Si diodes as X‐ray detectors. These provide very high energy resolution, but their sensitivity falls off at energies of 10–20 keV. They are well suited for measuring the K lines of elements with Z < 40, but for heavier elements, one must use K lines at low efficiency or use L or M lines that often overlap other lines. Either is a challenge for accurate quantitative analysis. CdTe detectors offer much higher efficiency at high energy but poorer energy resolution compared with Si diodes. In many important EDXRF measurements, both high and low Z elements are present. In this paper, we will compare the precision and accuracy of systems using the following: (1) a high resolution Si detector, (2) a high efficiency CdTe detector, and (3) a composite system using both detectors. We will show that CdTe detectors generally offer better analytical results than even a high resolution silicon drift detectors for K lines greater than 20 or 25 keV, whereas the high resolution Si detectors are much better at lower energies. We will also show the advantages of a combined system, using both detectors. Although a combined system would be more expensive, the increased accuracy, precision, and throughput will often outweigh the small increase in cost and complexity. The systems will be compared for representative applications that include both high and low Z elements. Copyright © 2012 John Wiley & Sons, Ltd.