| Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC （0001） substrates |
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| 引用本文： | 王党朝,张玉明. Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC （0001） substrates[J]. 中国物理 B, 2014, 0(7): 573-578 |
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| 作者姓名： | 王党朝 张玉明 |
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| 作者单位： | [1]School of Physics and Electronic Engineering, Xianyang Normal University, Xianyang 712000, China; [2]School of Microelectronics, Xidian University, Key Laboratory of Wide Band-gap Semiconductor Materials and Devices, Xidian University, Xi'an 71007 l, China |
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| 基金项目： | supported by the Key Specific Projects in the National Science&Technology Program,China(Grant No.2011ZX02707);the Key Research Foundationfrom the Ministry of Education of China(Grant No.JY10000925016);the Specialized Research Fund from Xianyang Normal University,China(GrantNos.13XSYK010 and 201302026) |
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| 摘 要： | We produced epitaxial graphene under a moderate pressure of 4 mbar(about 400 Pa) at temperature 1600℃. Raman spectroscopy and optical microscopy were used to confirm that epitaxial graphene has taken shape continually with slight thickness variations and regularly with a centimeter order of magnitude on 4H-SiC(0001) substrates. Then using X-ray photoelectron spectroscopy and Auger electron spectroscopy, we analyzed the chemical compositions and estimated the layer number of epitaxial graphene. Finally, an atomic force microscope and a scanning force microscope were used to characterize the morphological structure. Our results showed that under 4-mbar pressure, epitaxial graphene could be produced on a SiC substrate with a large area, uniform thickness but a limited morphological property. We hope our work will be of benefit to understanding the formation process of epitaxial graphene on SiC substrate in detail.
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| 关 键 词： | SiC substrate graphene epitaxial graphene |
Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC(0001)substrates |
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| 《Chinese Physics》. Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC(0001)substrates[J]. Chinese Physics B, 2014, 0(7): 573-578 |
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| Authors: | 《Chinese Physics》 |
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| Abstract: | SiC substrate, graphene, epitaxial graphene |
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| Keywords: | SiC substrate graphene epitaxial graphene |
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