首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Complete coverage of reduced graphene oxide on silicon dioxide substrates
Authors:Huang Jingfeng  Melanie Larisika  Chen Hu  Steve Faulkner  Myra ANimmo  Christoph Nowak  Alfred Tok Iing Yoong
Abstract:Reduced graphene oxide(RGO) has the advantage of an aqueous and industrial-scale production route. No other approaches can rival the RGO field effect transistor platform in terms of cost(US$1) and portability(millimetre scale).However the large deviations in the electrical resistivity of this fabricated material prevent it from being used widely. After an ethanol chemical vapor deposition(CVD) post-treatment to graphene oxide with ethanol, carbon islets are deposited preferentially at the edges of existing flakes. With a 2-h treatment, the standard deviation in electrical resistance of the treated chips can be reduced by 99.95%. Thus this process could enable RGO to be used in practical electronic devices.
Keywords:graphene oxide  reduced graphene oxide  graphene growth  field effect transistor
本文献已被 CNKI 维普 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号