| Modeling of metal–oxide semiconductor: Analytical bond-order potential for cupric oxide |
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| 引用本文： | 李坤,杨雯,魏计林,杜诗文,李永堂.Modeling of metal–oxide semiconductor: Analytical bond-order potential for cupric oxide[J].中国物理 B,2014(4):508-512. |
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| 作者姓名： | 李坤 杨雯 魏计林 杜诗文 李永堂 |
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| 基金项目： | Project supported by the Doctoral Program of Higher Education of China(Grant No.20111415120002);the National Natural Science Foundation of China(Grant Nos.11204199,61178067,and 51135007);the Program for the Outstanding Innovative Teams of Higher Learning Institutions of Shanxi Province,China;the Youth Foundation of Taiyuan University of Science and Technology,China(Grant No.20113020) |
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| 摘 要： |
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| 关 键 词： | 金属氧化物半导体 氧化铜 电位 键级 建模 化学气相沉积 结构参数 密度泛函理论 |
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