| Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer |
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| 作者姓名： | 卓祥景 章俊 李丹伟 易翰翔 任志伟 童金辉 王幸福 陈鑫 赵璧君 王伟丽 李述体 |
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| 基金项目： | supported by the National Natural Science Foundation of China(Grant No.51172079);the Science and Technology Program of Guangdong Province,China(Grant Nos.2010B090400456 and 2010A081002002);the Science and Technology Program of Guangzhou City,China(Grant No.11A52091257) |
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| 摘 要： | InGaN/AlInGaN superlattice(SL) is designed as the electron blocking layer(EBL) of an InGaN/GaN-based lightemitting diode(LED). The energy band structure, polarization field at the last-GaN-barrier/EBL interface, carrier concentration, radiative recombination rate, electron leakage, internal quantum efficiency(IQE), current–voltage(I–V) performance curve, light output–current(L–I) characteristic, and spontaneous emission spectrum are systematically numerically investigated using APSYS simulation software. It is found that the fabricated LED with InGaN/AlInGaN SL EBL exhibits higher light output power, low forward voltage, and low current leakage compared with those of its counterparts.Meanwhile, the efficiency droop can be effectively mitigated. These improvements are mainly attributed to the higher hole injection efficiency and better electron confinement when InGaN/AlInGaN SL EBL is used.
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Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer |
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| Abstract: | |
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| Keywords: | light-emitting diode InGaN/AlInGaN superlattice efficiency droop |
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