Improved crystal quality of GaN film with the in-plane lattice-matched In_(0.17)Al_(0.83)N interlayer grown on sapphire substrate using pulsed metal organic chemical vapor deposition期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

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Improved crystal quality of GaN film with the in-plane lattice-matched In_(0.17)Al_(0.83)N interlayer grown on sapphire substrate using pulsed metal organic chemical vapor deposition

Abstract:

Keywords:	In Al N interlayer GaN crystal quality dislocation reduction photoluminescence Raman spectra
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