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Influence of the channel electric field distribution on the polarization Coulomb field scattering in In_(0.18) Al_(0.82) N/AlN/GaN heterostructure field-effect transistors |
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| Abstract: | |
| Keywords: | In.Al.N/AlN/GaN heterostructure field-effect transistors channel electric field distribution polarization Coulomb field scattering two-dimensional electron gas mobility |
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