Nd3+:GGG and Cr4+:GGG epitaxial films for neodymium lasers |
| |
| Authors: | G A Bufetova M Yu Gusev I A Ivanov N S Neustroev D A Nikolaev V F Seregin V B Tsvetkov I A Shcherbakov |
| |
| Institution: | (1) Research Center for Laser Materials and Technologies, Prokhorov General Physics Institute, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991, Russia;(2) Research Institute of Materials Science and Technology, Zelenograd, Moscow, 124460, Russia |
| |
| Abstract: | An efficient technology was developed for growing the gadolinium gallium garnet (GGG) single-crystal films doped with Nd3+ or Cr and Ca ions. The films with thickness up to 100 μm have been grown by liquid-phase epitaxy method on undoped GGG substrates
of small and big sizes (5–8 mm and up to 76 mm in diameter, respectively). The dependence of absorption, luminescence spectra
and optical losses at the wavelength of 1 μm on growth temperature and melt-solution composition was studied. We demonstrated
that Cr4+ centers have been implemented in epitaxial films and these films may be used as passive Q-switches for laser systems. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
