p—Type Doping of GaN by Mg^＋ Implantation

Mg^ and Mg^ P^ were introduced into GaN by ion implantation.The structure and crystalline quality of the GaN samples were analysed by Rutherford backscattering and channelling spectormetry before(χmin=1.6%)and after implantation(χmin=4.1%),X-ray diffraction reveals the existence of implantation-induced damage in the case of post-implantation followed by rapid thermal annealing.The resistivtiy,average factor,carrier concentration and carrier mobility were measured by the Hall effect.The transformation from n-type to p-type for GaN was observed.