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Characterization of SILO in thin-oxides by using MOSFET substrate current |
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| Authors: | B De Salvo G Ghibaudo G Pananakakis F Mondon |
| Abstract: | A thorough SILC characterization by using MOSFET induced substrate current is for the first time developed. Based on obtained results, it is argued that a model consisting in a electrode-limited conduction, as the Fowler-Nordheim emission, cannot explains thin-oxide SILC results, while a bulk-limited trap-assisted transport well fits experimental data. |
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