Influence of hydrostatic pressure on the diffusion of hydrogen in n-GaAs : Si

Hydrogen diffusion experiments have been performed in buried silicon doped GaAs epilayers under hydrostatic pressure. The deuterium diffusion profile in n-GaAs : Si depends on the hydrostatic pressure: a plateau followed by a steep decrease progressively appears as the pressure is increased. This has been interpreted as being due to the increasing importance of the trapping-detrapping process of H⁻ on Si⁺ donors during the hydrogen diffusion. This increase has been attributed to a deepening of the hydrogen acceptor level with respect to the bottom of the Γ conduction band of GaAs as the hydrostatic pressure increases.