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单电子晶体管
引用本文:卢嘉. 单电子晶体管[J]. 物理, 1998, 27(3): 137-140
作者姓名:卢嘉
作者单位:哈佛大学应用科学部
摘    要:由电子束纳米微刻技术制成的单电子晶体管呈现了新的物理现象:单电子隧穿效应和电荷宇称效应.这些发现为创造新型的电子器件开辟了光明前景,包括可以用比最基本电荷e还小的电荷量来调制电流,处理以单电子为单位的电脑数字信息,并且也可发展成高度灵敏的微波探测器.

关 键 词:单电子晶体管,库仑阻塞,电荷宇称效应

SINGLE-ELECTRON TRANSISTOR
Lu Jia M.Tinkham. SINGLE-ELECTRON TRANSISTOR[J]. Physics, 1998, 27(3): 137-140
Authors:Lu Jia M.Tinkham
Abstract: The microstructured single-electron transistor made possible by recent developments of electron beam lithography has exhibited interesting physical phenomena,such as single-electron tunneling and charge parity.These effects have opened up new prospects for creating revolutionary novel electronic devices,including control of a non-vanishing DC current by sub-electron electric charge,processing of digital information bits in the form of single electrons,and providing highly sensitive mechanisms for microwave detection.
Keywords: single-electron tunneling transistor  Coulomb blockade  charge parity effect  
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